чем заменить транзистор 5n60c
Чем заменить транзистор 5n60c
Наименование прибора: FQD5N60C
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 49 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 2.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 15 nC
Сопротивление сток-исток открытого транзистора (Rds): 2.5 Ohm
FQD5N60C Datasheet (PDF)
October 2008QFETFQD5N60C / FQU5N60C 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especia
FQD5N60C / FQU5N60CN-Channel QFET MOSFET600 V, 2.8 A, 2.5 Features Description 2.8 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Gate Charge ( Typ. 15 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF)technology has bee
October 2008QFETFQD5N20L / FQU5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especia
October 2008QFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especial
9.3. fqd5n50.pdf Size:548K _fairchild_semi
TIGER ELECTRONIC CO.,LTD500V N-Channel MOSFETFQD5N50DESCRIPTIONThese N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche an
9.4. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology
April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
9.6. fqd5n20tf.pdf Size:690K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology
9.7. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi
May 2000TMQFETQFETQFETQFETFQD5N30 / FQU5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology
9.9. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
9.10. fqd5n15.pdf Size:840K _fairchild_semi
November 2013FQD5N15N-Channel QFET MOSFET150 V, 4.3 A, 800 m Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.3 A, 150 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 5.4 nC)MOSFET technology has been especially tai
9.11. fqd5n30tf fqd5n30tm.pdf Size:752K _fairchild_semi
May 2000TMQFETQFETQFETQFETFQD5N30 / FQU5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h
October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially